| Line 26: | Line 26: | ||
---- | ---- | ||
| + | = [[Media:ECE_270_Slecture_1.2_Notes.pdf|Accompanying lecture notes and associated, highlighted objectives]] = | ||
| + | |||
[[ECE_270_SLecture_Table_of_Contents|Back to table of content for "The Brown-Meyer Lectures on Digital Systems Design"]] | [[ECE_270_SLecture_Table_of_Contents|Back to table of content for "The Brown-Meyer Lectures on Digital Systems Design"]] | ||
[[2013 Fall ECE 270 Brown|Back to ECE 270 Homepage]] | [[2013 Fall ECE 270 Brown|Back to ECE 270 Homepage]] | ||
Revision as of 09:41, 19 July 2013
The Brown-Meyer Lectures on Digital Systems
Module 1: Boolean Algebra & CMOS logic structures
© 2013
1.3 Properties of Open Drain NAND Gates
Introduction
Open Drain (OD) NAND gates are an unusual sort of logic gates. Unlike a traditional logic gate containing both N-channel and P-channel MOSFETs, the OD NAND gates only contain N-channel MOSFETs which means it is only connected to ground. Thus an external power source of 5 volts is connected to the output with a pull-up resistor connecting the two.
Accompanying lecture notes and associated, highlighted objectives
Back to table of content for "The Brown-Meyer Lectures on Digital Systems Design"
